| PART |
Description |
Maker |
| 29F400C-55 29F400C-90 29F400C-70 |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
|
Macronix International Co., Ltd.
|
| AM29LV400B-100WAC |
EEPROM,FLASH,256KX16/512KX8,CMOS,BGA,48PIN,PLASTIC
From old datasheet system
|
AMD Inc
|
| KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY29F400TT55 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
|
Hynix Semiconductor
|
| HY29F400BT45 HY29F400TR90 HY29F400TT HY29F400TG55 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| 29F040-90 29F040-55 29F040-70 MX29F040PI-70 MX29F0 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 55 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 4分位[512KX8]的CMOS平等部门闪存
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Macronix International Co., Ltd.
|
| K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Surface Mount Resistors Thick Film Chip Resistors
256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HT27C040 |
CMOS 512Kx8-Bit OTP EPROM
|
holtek
|
| N04L163WC1C |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N04M163WL1A |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L |
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
